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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. february 2009 rev 1 1/11 11 STGF14N60D stgp14n60d 14 a - 600 v - short circuit rugged igbt features low on-voltage drop (v ce(sat) ) operating junction temperature up to 175 c low c res / c ies ratio (no cross conduction susceptibility) tight parameter distribution ultra fast soft recovery antiparallel diode short circuit rugged applications motor drives high frequency inverters smps and pfc in both hard switch and resonant topologies description this igbt utilizes the advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram 1 2 3 1 2 3 to-220 to-220fp table 1. device summary order codes marking package packaging STGF14N60D gf14n60d to-220fp tube stgp14n60d gp14n60d to-220 tube www.st.com
contents STGF14N60D, stgp14n60d 2/11 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
STGF14N60D, stgp14n60d electrical ratings 3/11 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 to-220fp v ces collector-emitter voltage (v ge = 0) 600 v i c (1) 1. calculated according to the iterative formula: collector current (continuous) at t c = 25 c 25 11 a i c (1) collector current (continuous) at t c = 100 c 14 7 a i cl (2) 2. vclamp = 80% of v ces , t j =175 c, r g =10 ? , v ge =15 v turn-off latching current 50 a i cp (3) 3. pulse width limited by max. junction temperature allowed pulsed collector current 50 a v ge gate-emitter voltage 20 v i f diode rms forward current at t c = 25 c 20 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 55 a v iso insulation withstand voltage (rms) from all three leads to external hea sink ( t=1 s; t c = 25 c) -- 2500 v p tot total dissipation at t c = 25 c 95 33 w t scw short circuit withstand time, v ce = 0.5v (br)ces , t c = 125 c, r g = 10 ?, v ge = 15 v 5s t j operating junction temperature ? 40 to 175 c table 3. thermal resistance symbol parameter value unit to-220 to-220fp r thj-case thermal resistance junction-case igbt max. 1.56 4.5 c/w r thj-case thermal resistance junction-case diode max. 2.2 5.6 c/w r thj-amb thermal resistance juncti on-ambient max. 62.5 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ---------------------------------------------------------------------------------------------------------- =
electrical characteristics STGF14N60D, stgp14n60d 4/11 2 electrical characteristics (t case =25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 600 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 7 a v ge = 15 v, i c = 7 a, t c = 125 c 2.1 1.8 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250 a 4.5 6.5 v i ges gate-emitter leakage current (v ce = 0) v ge = 20 v, t c = 125 c 100 na i ces collector cut-off current (v ge = 0) v ce = 600 v v ce = 600 v, t c = 125 c 150 1 a ma g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ce = 15 v , i c = 7 a 3.2 s table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge = 0 tbd tbd tbd pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 390 v, i c = 7 a, v ge = 15 v (see figure 3) tbd tbd tbd nc nc nc
STGF14N60D, stgp14n60d electrical characteristics 5/11 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, (see figure 2) tbd tbd tbd ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, t c = 125 c (see figure 2) tbd tbd tbd ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 7 a, r ge = 10 ? , v ge = 15 v (see figure 2) tbd tbd tbd ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 390 v, i c = 7 a, r ge = 10 ? , v ge = 15 v t c = 125 c (see figure 2) tbd tbd tbd ns ns ns table 7. switching energy (inductive load) symbol parameter test co nditions min typ. max unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circui t. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts and diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current. turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, (see figure 2) tbd tbd tbd j j j eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 390 v, i c = 7 a r g = 10 ? , v ge = 15 v, t c = 125 c (see figure 2) tbd tbd tbd j j j table 8. collector-emitter diode symbol parameter test conditions min typ. max unit v f forward on-voltage i f = 7 a i f = 7 a, t c = 125 c 1.8 1.3 2.1 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7 a, v r = 40 v, di/dt = 100 a/s (see figure 5) 37 40 2.1 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 7 a, v r = 40 v, t c = 125 c, di/dt = 100 a/s (see figure 5) 61 98 3.2 ns nc a
test circuit STGF14N60D, stgp14n60d 6/11 3 test circuit figure 2. test circuit for inductive load switching figure 3. gate charge test circuit figure 4. switching waveforms figure 5. diode recovery times waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f di/dt
STGF14N60D, stgp14n60d package mechanical data 7/11 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STGF14N60D, stgp14n60d 8/11 dim. mm . x a m . p y t . n i m 6 . 4 4 . 4 a 7 . 2 5 . 2 b 5 7 . 2 5 . 2 d 7 . 0 5 4 . 0 e 1 5 7 . 0 f 0 7 . 1 5 1 . 1 1 f 5 . 1 5 1 . 1 2 f 2 . 5 5 9 . 4 g 7 . 2 4 . 2 1 g 4 . 0 1 0 1 h 6 1 2 l 6 . 0 3 6 . 8 2 3 l 6 . 0 1 8 . 9 4 l 6 . 3 9 . 2 5 l 4 . 6 1 9 . 5 1 6 l 3 . 9 9 7 l 2 . 3 3 a i d 7012510_rev_j a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1 to-220fp mechanical data
STGF14N60D, stgp14n60d package mechanical data 9/11 to-220 mechanical data dim mm inch min typ max min typ max a 4.40 4.60 0.17 3 0.1 8 1 b 0.61 0. 88 0.024 0.0 3 4 b 1 1.14 1.70 0.044 0.066 c0.4 8 0.70 0.01 9 0.027 d 15.25 15.75 0.6 0.62 d1 1.27 0.050 e 10 10.40 0. 393 0.40 9 e 2.40 2.70 0.0 9 4 0.106 e1 4. 9 5 5.15 0.1 9 4 0.202 f1.2 3 1. 3 2 0.04 8 0.051 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.0 9 4 0.107 l1 3 14 0.511 0.551 l1 3 .50 3 . 93 0.1 3 7 0.154 l20 16.40 0.645 l 3 02 8 . 9 0 1.1 3 7 ? p 3 .75 3 . 8 5 0.147 0.151 q2.65 2. 9 5 0.104 0.116
revision history STGF14N60D, stgp14n60d 10/11 5 revision history table 9. document revision history date revision changes 20-feb-2009 1 initial release.
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